GaN microwave and power electronics - Thermal management, reliability and integration with diamond
材料学院青促会学术交流报告
Prof.
Martin Kuball Center
for Device Thermography
and Reliability University of Bristol U.K.
Title: GaN
microwave and power electronics - Thermal management, reliability and
integration with diamond
地点:浙江大学玉泉校区曹光彪楼326会议室
时间:2017年07月18日(星期二)
09:00
邀请人:秦发祥
材料学院青年教师发展促进会承办
Abstract: AlGaN/GaN high electron mobility transistors
(HEMT) will be the leading devices for microwave and power conversion
applications. Peak RF output power densities of up to 40W/mm, and maximum
frequencies exceeding 300 GHz have been reported, i.e., a spectacular performance
enabling disruptive changes for many systems applications. GaN HEMT
power switching devices offer higher efficiencies than existing state of the
art silicon MOSFETs. However, the devices are typically not operated at these
power levels because it would cause failure after a time; de-rating to 5-10
W/mm is therefore typical. To fully realise the potential of this technology,
key technological challenges need to be overcome. This in particular includes
the integration of GaN
electronics with diamond. Diamond has the highest thermal conductivity known to
mankind, to enable most optimal heat extraction from the devices to avoid
excessive channel temperatures. When properly integrated this will enable GaN
electronics with >x5 power densities to what is presently possible. In the
presentation I will review the challenges to overcome for enabling GaN-on-diamond
electronics, thermally speaking and from a reliability perspective.
Brief
Bio: Professor Martin Kuball is
Professor in Physics and is Director of the Center for
Device Thermography and
Reliability (CDTR) at the University of Bristol, U.K. He is Fellow of the
Institute of Physics and of the Institute of Engineering and Technology. He was
awarded in 2015 the Royal Society Wolfson
Research Merit Award
for this research on GaN-on-Diamond
electronic devices. He holds a PhD from the Max-Planck Institute for Solid
State Physics and joined the University of Bristol after being Feodor Lynen
Postdoctoral Fellow at Brown University, U.S.A. His research focuses on thermal
and reliability studies of semiconductor devices, in particular on the
development and application of new measurement methodologies, with a particular
focus on GaN
electronic devices. Professor Kuball’s work
has been disseminated through more than 250 publications, as well as in
numerous invited contributions at national and international conferences. He
has organized various national and international conferences in physics,
materials science and engineering, and is member of programme committees of
several international conferences (e.g. ROCS & Mantech
2017, Palm Springs / USA, ICNS 2017, Strasbourg / France). He leads the GaN-on-diamond
electronics £5M EPSRC programme grant GaN-DaME
(EP/P00945X) and has numerous other UK, US and Asian funded projects.
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