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GaN microwave and power electronics - Thermal management, reliability and integration with diamond
发布者:管理员 日期:2017/7/18 浏览次数: 1089次

材料学院青促会学术交流报告

Prof. Martin Kuball Center for Device Thermography and Reliability University of Bristol U.K.

Title: GaN microwave and power electronics - Thermal management, reliability and integration with diamond


地点:浙江大学玉泉校区曹光彪楼326会议室

时间:2017年07月18日(星期二)  09:00

邀请人:秦发祥

材料学院青年教师发展促进会承办


Abstract:  AlGaN/GaN high electron mobility transistors (HEMT) will be the leading devices for microwave and power conversion applications. Peak RF output power densities of up to 40W/mm, and maximum frequencies exceeding 300 GHz have been reported, i.e., a spectacular performance enabling disruptive changes for many systems applications. GaN HEMT power switching devices offer higher efficiencies than existing state of the art silicon MOSFETs. However, the devices are typically not operated at these power levels because it would cause failure after a time; de-rating to 5-10 W/mm is therefore typical. To fully realise the potential of this technology, key technological challenges need to be overcome. This in particular includes the integration of GaN electronics with diamond. Diamond has the highest thermal conductivity known to mankind, to enable most optimal heat extraction from the devices to avoid excessive channel temperatures. When properly integrated this will enable GaN electronics with >x5 power densities to what is presently possible. In the presentation I will review the challenges to overcome for enabling GaN-on-diamond electronics, thermally speaking and from a reliability perspective.


Brief Bio:   Professor Martin Kuball is Professor in Physics and is Director of the Center for Device Thermography and Reliability (CDTR) at the University of Bristol, U.K. He is Fellow of the Institute of Physics and of the Institute of Engineering and Technology. He was awarded in 2015 the Royal Society Wolfson Research Merit Award for this research on GaN-on-Diamond electronic devices. He holds a PhD from the Max-Planck Institute for Solid State Physics and joined the University of Bristol after being Feodor Lynen Postdoctoral Fellow at Brown University, U.S.A. His research focuses on thermal and reliability studies of semiconductor devices, in particular on the development and application of new measurement methodologies, with a particular focus on GaN electronic devices. Professor Kuball’s work has been disseminated through more than 250 publications, as well as in numerous invited contributions at national and international conferences. He has organized various national and international conferences in physics, materials science and engineering, and is member of programme committees of several international conferences (e.g. ROCS & Mantech 2017, Palm Springs / USA, ICNS 2017, Strasbourg / France). He leads the GaN-on-diamond electronics £5M EPSRC programme grant GaN-DaME (EP/P00945X) and has numerous other UK, US and Asian funded projects.


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